BE500569A - - Google Patents

Info

Publication number
BE500569A
BE500569A BE500569DA BE500569A BE 500569 A BE500569 A BE 500569A BE 500569D A BE500569D A BE 500569DA BE 500569 A BE500569 A BE 500569A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE500569A publication Critical patent/BE500569A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • C30B15/22Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
BE500569D 1950-01-13 BE500569A (en])

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US138354A US2683676A (en) 1950-01-13 1950-01-13 Production of germanium rods having longitudinal crystal boundaries

Publications (1)

Publication Number Publication Date
BE500569A true BE500569A (en])

Family

ID=22481651

Family Applications (1)

Application Number Title Priority Date Filing Date
BE500569D BE500569A (en]) 1950-01-13

Country Status (4)

Country Link
US (1) US2683676A (en])
BE (1) BE500569A (en])
FR (1) FR1029684A (en])
GB (1) GB706849A (en])

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2768914A (en) * 1951-06-29 1956-10-30 Bell Telephone Labor Inc Process for producing semiconductive crystals of uniform resistivity
US2841860A (en) * 1952-08-08 1958-07-08 Sylvania Electric Prod Semiconductor devices and methods
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2854363A (en) * 1953-04-02 1958-09-30 Int Standard Electric Corp Method of producing semiconductor crystals containing p-n junctions
US2893847A (en) * 1954-02-23 1959-07-07 Siemens Ag Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
US2793103A (en) * 1954-02-24 1957-05-21 Siemens Ag Method for producing rod-shaped bodies of crystalline material
DE1134967B (de) * 1954-03-02 1962-08-23 Siemens Ag Verfahren zum Ziehen eines stabfoermigen kristallinen Halbleiterkoerpers
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group
BE536985A (en]) * 1954-04-01
US2842467A (en) * 1954-04-28 1958-07-08 Ibm Method of growing semi-conductors
US2859141A (en) * 1954-04-30 1958-11-04 Raytheon Mfg Co Method for making a semiconductor junction
NL246576A (en]) * 1954-05-18 1900-01-01
BE542056A (en]) * 1954-10-15
DE1069389B (de) * 1954-10-28 1959-11-19 Jean de Gaillard de la Valdene, Palm Beach, Fla. (V. St. A.) Verfahren und Vorrichtung zum Züchten von Einkristallen
US2935385A (en) * 1955-03-25 1960-05-03 Texas Instruments Inc Apparatus for manufacturing semiconductor materials
US2839436A (en) * 1955-04-19 1958-06-17 Texas Instruments Inc Method and apparatus for growing semiconductor crystals
US2871149A (en) * 1955-05-02 1959-01-27 Sprague Electric Co Semiconductor method
US2835614A (en) * 1955-11-30 1958-05-20 Raulaud Corp Method of manufacturing crystalline material
NL210216A (en]) * 1955-12-02
US2900708A (en) * 1956-02-16 1959-08-25 Marvalaud Inc Apparatus for producing alloy and bimetallic filaments
US2889240A (en) * 1956-03-01 1959-06-02 Rca Corp Method and apparatus for growing semi-conductive single crystals from a melt
DE1262472B (de) * 1956-07-12 1968-03-07 Siemens Ag Verfahren zur Waermebehandlung von hochreinem Halbleitermaterial durch in dem Halbleiter fliessenden Strom
US2975036A (en) * 1956-10-05 1961-03-14 Motorola Inc Crystal pulling apparatus
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
US2988433A (en) * 1957-12-31 1961-06-13 Ibm Method of forming crystals
NL269311A (en]) * 1960-09-20
DE1242578B (de) * 1960-09-29 1967-06-22 Siemens Ag Vorrichtung zum Herstellen von bandfoermigen, dendritisch gewachsenen, hochreinen Halbleiterkristallen
US3147085A (en) * 1961-09-14 1964-09-01 Gen Electric Apparatus for growing whiskers
BE624959A (en]) * 1961-11-20
NL128651C (en]) * 1966-01-26
US3485289A (en) * 1966-02-01 1969-12-23 Mitsubishi Chem Ind Method for the manufacture of aluminum or aluminum alloy castings
US3494804A (en) * 1968-07-15 1970-02-10 Air Reduction Method for growing crystals
US3822111A (en) * 1971-02-25 1974-07-02 Sony Corp Apparatus for pulling up semiconductor crystals
GB1475261A (en) * 1975-04-02 1977-06-01 Nat Res Dev Siliceous materials
US4548879A (en) * 1984-05-21 1985-10-22 Rohm And Haas Company Solderable polymer thick films
JPS6131382A (ja) * 1984-07-20 1986-02-13 Sumitomo Electric Ind Ltd 化合物半導体単結晶の引上方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1531784A (en) * 1921-12-13 1925-03-31 Cleveland Trust Co Sheet metal
US1738307A (en) * 1927-04-11 1929-12-03 Bell Telephone Labor Inc Metallic element
US1921934A (en) * 1929-12-02 1933-08-08 Blair Strip Steel Company Art of annealing
US2188771A (en) * 1934-01-26 1940-01-30 Firestone Tire & Rubber Co Electrode
US2091903A (en) * 1935-11-04 1937-08-31 Hughes Tool Co Method of treating tungsten carbide
FR957542A (en]) * 1941-04-04 1950-02-23

Also Published As

Publication number Publication date
FR1029684A (fr) 1953-06-04
US2683676A (en) 1954-07-13
GB706849A (en) 1954-04-07

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